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Volumn 177, Issue 1, 2000, Pages 27-35

Epitaxy, composites and colloids of gallium nitride achieved by transformation of single source precursor

Author keywords

[No Author keywords available]

Indexed keywords

COLLOIDS; COMPOSITE MATERIALS; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; POROUS MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SYNTHESIS (CHEMICAL); THIN FILMS;

EID: 0033903589     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(200001)177:1<27::AID-PSSA27>3.0.CO;2-#     Document Type: Article
Times cited : (10)

References (33)
  • 7
    • 0031073768 scopus 로고    scopus 로고
    • GaN and Related Materials for Device Application
    • GaN and Related Materials for Device Application, MRS Bulletin 22, 17 (1997).
    • (1997) MRS Bulletin , vol.22 , pp. 17


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.