AFM and RHEED study of Ge/Si(001) quantum dot modification by Si capping

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 374-379

  Bischoff, J L ^a   Pirri, C ^a   Dentel, D ^a   Simon, L ^a   Bolmont, D ^a   Kubler, L ^a  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL MODIFICATION; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DEPOSITION; GERMANIUM; MOLECULAR BEAM EPITAXY; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR QUANTUM DOTS; SILICON; SURFACE ROUGHNESS;

ADATOMS; BURIED ISLANDS;

NANOSTRUCTURED MATERIALS;

EID: 0033903073     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00278-0     Document Type: Article

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