SCOPUS 정보 검색 플랫폼

Solid State Electronics

Volumn 36, Issue 3, 1993, Pages 321-330

Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition

(3) Yang, Kyounghoon a East, Jack R a Haddad, George I a

a UNIVERSITY OF MICHIGAN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FIELD EMISSION CATHODES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; THERMIONIC TUBES;

ABRUPT HETROJUNCTIONS; GALLIUM ARSENIDE; THERMIONIC-FIELD EMISSION; TRIANGULAR HETEROJUNCTION BARRIERS;

HETEROJUNCTIONS;

EID: 0027559023 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(93)90083-3 Document Type: Review

Times cited : (170)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.