Type II heterojunctions in the GaInAsSb/GaSb system

Semiconductor Science and Technology

Volumn 9, Issue 7, 1994, Pages 1279-1295

  Mikhailova, M P ^a   Titkov, A N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY BAND DIAGRAMS; NARROW GAP SEMICONDUCTOR; STAGGERED BAND ALIGNMENT; TYPE II HETEROJUNCTIONS;

ELECTRIC PROPERTIES; ELECTRONS; ENERGY GAP; INTERFACES (MATERIALS); LIGHT SOURCES; LUMINESCENCE; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

HETEROJUNCTIONS;

EID: 0028460921     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/9/7/001     Document Type: Review

References (103)

1. A bird's-eye view on the evolution of semiconductor superlattices and quantum wells
2. Injection InGaSbAs laser emitting at 2.4μ(300K)
3. Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers
4. High-speed GaInAsSb/GaSb PIN photodetectors for wavelengths to 2.3 μm
5. Croissance par épitaxie en phase liquide et caractérisation d'alliages Ga1-xIoxAsySb1-y à paramètre de maille accordé sur celui de GaSb
6. The pseudoquaternary phase diagram of the Ga-In-As-Sb system
7. High temperature liquid phase epitaxy of (100) oriented GaInAsSb near the miscibility gap boundary
8. Liquid Phase Epitaxial Growth of In1-xGaxAs1-ySbywith InAs Enriched Composition on InAs Substrate
9. Band-to-band auger effect in long wavelength multinary III-V alloy semiconductor lasers