Analysis of the R0A product and detectivity in a GaInAsSb infrared photovoltaic detector

Journal of Physics D: Applied Physics

Volumn 31, Issue 22, 1998, Pages 3291-3297

  Tian, Yuan ^a   Zhou, Tianming ^a   Zhang, Baolin ^a   Jin, Yixin ^a   Jiang, Hong ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOVOLTAIC EFFECTS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

INFRARED PHOTOVOLTAIC DETECTORS; SEMICONDUCTOR DETECTORS;

INFRARED DETECTORS;

EID: 0032204410     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/22/018     Document Type: Article

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