Electrical properties of the Ta-RuO2 diffusion barrier for high-density memory devices

Journal of the American Ceramic Society

Volumn 83, Issue 4, 2000, Pages 949-951

  Yoon, Dong Soo ^a   Baik, Hong Koo ^a   Lee, Sung Man ^b  

^a Yonsei University   (South Korea)

^b Kangwon National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; DIELECTRIC MATERIALS; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; NANOSTRUCTURED MATERIALS; OXIDATION RESISTANCE; RUTHENIUM COMPOUNDS; TANTALUM;

DIFFUSION BARRIER; RUTHENIUM DIOXIDE;

CERAMIC MATERIALS;

EID: 0033899152     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2000.tb01301.x     Document Type: Article

References (8)

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