Microscopic analysis of the influence of Ge profiles on the current-noise operation mode of n-Si/p-Si1-xGex heterostructures

Semiconductor Science and Technology

Volumn 15, Issue 3, 2000, Pages 277-285

  Martin M J ^a   Pardo, D ^a   Velazquez J E ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; MICROSCOPIC EXAMINATION; MONTE CARLO METHODS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

STATIONARY CARRIER TRANSPORT;

HETEROJUNCTIONS;

EID: 0033889248     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/3/310     Document Type: Article

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