Study of current-mode noise of Si1-xGex/Si strained heterojunctions

Physica Status Solidi (B) Basic Research

Volumn 204, Issue 1, 1997, Pages 462-465

  Martin M J ^a,b   Pardo, D ^a   Velazquez J E ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031483410     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(199711)204:1<462::AID-PSSB462>3.0.CO;2-V     Document Type: Article

References (4)

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2. M. J. MARTÍN, J. E. VELÁZQUEZ, and D. PARDO, Semicond. Sci. Technol. 9, 1316 (1994).
3. M. J. MARTÍN, J. E. VELÁZQUEZ, and D. PARDO, J. Appl. Phys. 79, 6975 (1996).
4. S. C. JAIN, J. POORTMANS, S. S. IYER, J. J. LOFERSKI, J. NIJS, R. MERTENS, and R. VAN OVERSTRATEN, IEEE Trans. Electron. Devices, 40, 2338 (1993).