Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 639-644

  Silvestre, L ^a   Ougazzaden, A ^a   Delprat, D ^a   Ramdane, A ^a   Daguet, C ^a   Patriarche, G ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

DISTRIBUTED BRAGG REFLECTOR LASERS; MULTIPLE QUANTUM WELLS; SELECTIVE AREA EPITAXY; STRAINED LAYER DBR LASERS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030680371     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00533-7     Document Type: Article

References (5)

1. O. Kayser, R. Westphalen, B. Opitz and P. Balk, J. Crystal Growth 112 (1991) 111.
2. O. Kayser, J. Crystal Growth 107 (1991) 989.
3. Y. D Galeuchet, P. Roentgen and V. Graf, J. Appl. Phys. 68 (1990) 560.
4. F. Delorme, S. Slempkes, G. Alibert, B. Rose and J. Brandon, Electron. Lett. 27 (1991) 1969.
5. T. Sasaki, M. Yamaguchi and M. Kitamura, J. Crystal Growth 145 (1994) 846.