Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by liquid phase epitaxy

Journal of Crystal Growth

Volumn 169, Issue 4, 1996, Pages 613-620

  Hayakawa, Y ^a   Iida, S ^a   Sakurai, T ^a   Yanagida, H ^a   Kikuzawa, M ^a   Koyama, T ^a   Kumagawa, M ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; LIQUID PHASE EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE; SUBSTRATES;

EPITAXIAL LATERAL OVERGROWTH; ETCH PIT DENSITY (EPD);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030566588     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00491-5     Document Type: Article

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