Chemical beam epitaxy of integrated 1.55 μm lasers on exact and misoriented (1 0 0)-InP substrates

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 275-280

  Nutsch, A ^a   Dahlheimer, B ^a   Dohr N ^a   Kratzer, H ^a   Lukas, R ^a   Torabi, B ^b   Trankle G ^c   Abstreiter, G ^a   Weimann, G ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE; SURFACE TREATMENT;

SURFACE RECONSTRUCTION;

SEMICONDUCTOR LASERS;

EID: 0032096794     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00073-6     Document Type: Article

References (4)

1. A. Nutsch, B. Torabi, H. Kratzer, G. Tränkle, G. Weimann, J. Crystal Growth 175/176 (1997) 1200.
2. B. Torabi, A. Nutsch, H. Kratzer, G. Tränkle, G. Weimann, Proc. 8th Int. Conf. Indium Phosphide and Related Materials, Schwäbisch Gmünd, Germany 1996, p. 773.
3. H. Kratzer, A. Nutsch, B. Torabi, G. Tränkle, G. Weimann, Jpn. J. Appl. Phys. 36 (1997) 1880.
4. H. Heinecke, B. Baur, R. Höger, B. Jobst, A. Miklis, J. Crystal Growth 124 (1992) 170.