MOCVD growth of cubic GaN on 3C-SiC deposited on Si(100) substrates

Journal of Electronic Materials

Volumn 29, Issue 3, 2000, Pages 317-321

  Wei, C H ^a   Xie, Z Y ^a   Li, L Y ^a   Yu, Q M ^a   Edgar, J H ^a  

^a Kansas State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES;

HEXAGONAL PHASES;

SEMICONDUCTING FILMS;

EID: 0033886238     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0070-z     Document Type: Article

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