InGaAs single crystal with a uniform composition in the growth direction grown on an InGaAs seed using the multicomponent zone growth method

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 171-178

  Nishijima, Yoshito ^a   Nakajima, Kazuo ^b   Otsubo, Koji ^a   Ishikawa, Hiroshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; CRYSTAL GROWTH; CRYSTAL ORIENTATION; FREEZING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

MULTICOMPONENT ZONE GROWTH METHOD (MCZG);

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0033881858     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00407-8     Document Type: Article

References (13)

1. Kusunoki T., Takenaka C., Nakajima K. J. Crystal Growth. 112:1991;33.
2. Kusunoki T., Takenaka C., Nakajima K. J. Crystal Growth. 115:1991;723.
3. Bischopink G., Benz K.W. J. Crystal Growth. 128:1993;466.
4. Tanaka A., Watanabe A., Kimura M., Sukegawa T. J. Crystal Growth. 135:1994;269.
5. Yonenaga I., Matsui A., Tozawa S., Sumino K., Fukuda T. J. Crystal Growth. 154:1995;275.
6. Ishikawa H. Appl. Phys. Lett. 63:1993;712.
7. Ishikawa H., Suemune I. IEEE Photon. Technol. Lett. 33:1994;344.
8. Otsubo K., Shoji H., Kusunoki T., Uchida T., Nishijima Y., Nakajima K., Ishikawa H. Electron. Lett. 33:1997;1795.
9. K. Otsubo, Y. Nishijima, T. Uchida, H. Shoji, K. Nakajima, H. Ishikawa, Conference Digest, 1998 IEEE 16th International Semiconductor Laser Conference Nara, Japan, MC5, 27.
10. Y. Nishijima, K. Nakajima, K. Otsubo, H. Ishikawa, Proceedings IPRM'98, Tsukuba, 1998, TuB1-5, 45.
11. Suzuki T., Nakajima K., Kusunoki T., Kato T. J. Electron. Mater. 25:1996;357.
12. Nakajima K., Kusunoki T., Otsubo K. J. Crystal Growth. 173:1997;42.
13. Nishijima Y., Nakajima K., Otsubo K., Ishikawa H. J. Crystal Growth. 197:1999;769.