Lasing at 1.3 μm in strained quantum well lasers on InGaAs ternary substrates

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 1998, Pages 27-28

  Otsubo, K ^a   Nishijima, Y ^a   Uchida, T ^a   Shoji, H ^a   Nakajima, K ^a   Ishikawa, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SENSITIVITY ANALYSIS; SUBSTRATES;

SLOPE EFFICIENCY; STRAINED QUANTUM WELL LASERS; TERNARY SUBSTRATES;

QUANTUM WELL LASERS;

EID: 0032315830     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)