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Volumn 197, Issue 4, 1999, Pages 769-776
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InGaAs single crystal using a GaAs seed grown with the vertical gradient freeze technique
a
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Author keywords
InGaAs; Ternary substrate; VGF growth
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Indexed keywords
CRYSTAL GROWTH;
CRYSTAL LATTICES;
CRYSTAL ORIENTATION;
PHASE INTERFACES;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTOR GROWTH;
SINGLE CRYSTALS;
THERMAL GRADIENTS;
VERTICAL FREEZE GRADIENT (VGF) TECHNIQUE;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
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EID: 0033100408
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)00925-7 Document Type: Article |
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Times cited : (23)
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References (8)
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