New extraction method for effective channel length on lightly doped drain MOSFET's

Volumn , Issue , 1990, Pages 117-122

  Ida, Jiro ^a   Kita, Akio ^a   Ichikawa, Fumio ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS--DOPING;

CHANNEL LENGTH; EXTRACTION METHOD; LIGHTLY DOPED DRAIN MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025212392     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)