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Volumn 6, Issue 6, 1990, Pages 33-38

Measuring the effective channel length of MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC MEASUREMENTS; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

EID: 0025511663     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/101.100256     Document Type: Article
Times cited : (78)

References (17)
  • 1
    • 84949083566 scopus 로고
    • On the Accuracy of Channel Length Characterization of LDD MOSFET’s
    • J. Y. -C. Sun, M. R. Wordeman and S. E. Laux, “On the Accuracy of Channel Length Characterization of LDD MOSFET’s,” IEEE Trans. Elect. Dev., ED-33, p. 1556, 1986.
    • (1986) IEEE Trans. Elect. Dev. , vol.ED-33 , pp. 1556
    • Sun, J.Y.-C.1    Wordeman, M.R.2    Laux, S.E.3
  • 2
    • 0024770257 scopus 로고
    • Application of Electrical Effective Channel Length and External Resistance Measurement Techniques to Submicrometer CMOS Process
    • D.J. Mountain, “Application of Electrical Effective Channel Length and External Resistance Measurement Techniques to Submicrometer CMOS Process,” IEEE Trans. Electron Dev., ED-36, p. 24–99, 1989.
    • (1989) IEEE Trans. Electron Dev. , vol.ED-36 , pp. 24-99
    • Mountain, D.J.1
  • 3
    • 0022751618 scopus 로고
    • Analysis of the Gate-Voltage-Dependent Series Resistance of MOSFET’s
    • K. K. Ng and W. T. Lynch, “Analysis of the Gate-Voltage-Dependent Series Resistance of MOSFET’s,” IEEE Trans. Elect. Dev., ED-33(7), p. 965, 1986.
    • (1986) IEEE Trans. Elect. Dev. , vol.ED-33 , Issue.7 , pp. 965
    • Ng, K.K.1    Lynch, W.T.2
  • 5
    • 0018468995 scopus 로고
    • A New Method to Determine Effective MOSFET Channel Length
    • K. Terada and H. Muta, “A New Method to Determine Effective MOSFET Channel Length,” Jap. J. Appl. Phys., 18(5), p. 953, 1979.
    • (1979) Jap. J. Appl. Phys. , vol.18 , Issue.5 , pp. 953
    • Terada, K.1    Muta, H.2
  • 7
    • 0019057709 scopus 로고
    • Experimental Derivation of the Source and Drain Resistance of MOS Transistors
    • P. I. Suciu and R. L. Johnston, “Experimental Derivation of the Source and Drain Resistance of MOS Transistors,” IEEE Trans. Elect. Dev., ED-27(9), p.1846, 1980.
    • (1846) IEEE Trans. Elect. Dev. , vol.ED-27 , Issue.9 , pp. 1846
    • Suciu, P.I.1    Johnston, R.L.2
  • 9
    • 0020304176 scopus 로고
    • An Improved Method to Determine MOSFET Channel Length
    • K. L. Peng and M. A. Afromowitz, “An Improved Method to Determine MOSFET Channel Length,” IEEE Elect. Dev. Lett., EDL-3(12), p. 360, 1982.
    • (1982) IEEE Elect. Dev. Lett. , vol.EDL-3 , Issue.12 , pp. 360
    • Peng, K.L.1    Afromowitz, M.A.2
  • 10
    • 0021489601 scopus 로고
    • Source-and-Drain Series Resistance of LDD MOSFET’s
    • B. J. Sheu, C. Hu, P. K. Ko and F. C. Hsu, “Source-and-Drain Series Resistance of LDD MOSFET’s,” IEEE Elect. Dev. Lett., EDL-5(9), p. 365, 1984.
    • (1984) IEEE Elect. Dev. Lett. , vol.EDL-5 , Issue.9 , pp. 365
    • Sheu, B.J.1    Hu, C.2    Ko, P.K.3    Hsu, F.C.4
  • 12
    • 0021521674 scopus 로고
    • Basic Parameter Measurement and Channel Broadening Effect in the Submicrometer MOSFET
    • K. -L. Peng, S. -Y. Oh, M. A. Afromowitz and J. L. Moll, “Basic Parameter Measurement and Channel Broadening Effect in the Submicrometer MOSFET,” IEEE Elect. Dev. Lett., EDL-5(11), p. 473, 1984.
    • (1984) IEEE Elect. Dev. Lett. , vol.EDL-5 , Issue.11 , pp. 473
    • Peng, K.-L1    Oh, S.-Y.2    Afromowitz, M.A.3    Moll, J.L.4
  • 13
    • 0022028916 scopus 로고
    • A Modification on ‘An Improved Method to Determine MOSFET Channel Length,’
    • J. Whitfield, “A Modification on ‘An Improved Method to Determine MOSFET Channel Length,” IEEE Elect. Dev. Lett., EDL-6(3), p. 109, 1985.
    • (1985) IEEE Elect. Dev. Lett. , vol.EDL-6 , Issue.3 , pp. 109
    • Whitfield, J.1
  • 14
    • 0022706709 scopus 로고
    • A Derivative Method to Determine a MOSFET’s Effective Channel Length and Width Electrically
    • L. Chang and J. Berg, “A Derivative Method to Determine a MOSFET’s Effective Channel Length and Width Electrically,” IEEE Elect. Dev. Lett., EDL-7(4), p. 229, 1986.
    • (1986) IEEE Elect. Dev. Lett. , vol.EDL-7 , Issue.4 , pp. 229
    • Chang, L.1    Berg, J.2
  • 15
    • 84907801823 scopus 로고
    • Gate-Voltage-Dependent Effective Channel Length and Series Resistance of LDD MOSFET’s
    • G. J. Hu, C. Chang and Y. T. Chia, “Gate-Voltage-Dependent Effective Channel Length and Series Resistance of LDD MOSFET’s,” IEEE Trans. Elect. Dev., ED-34(12), p. 2469, 1987.
    • (1987) IEEE Trans. Elect. Dev. , vol.ED-34 , Issue.12 , pp. 2469
    • Hu, G.J.1    Chang, C.2    Chia, Y.T.3
  • 17
    • 0021517809 scopus 로고
    • A Capacitance Method to Determine Channel Lengths for Conventional and LDD MOSFET’s
    • B. J. Sheu and P. K. Ko, “A Capacitance Method to Determine Channel Lengths for Conventional and LDD MOSFET’s,” IEEE Elect. Dev. Lett., EDL-5(11), p. 491, 1984.
    • (1984) IEEE Elect. Dev. Lett. , vol.EDL-5 , Issue.11 , pp. 491
    • Sheu, B.J.1    Ko, P.K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.