-
1
-
-
84949083566
-
On the Accuracy of Channel Length Characterization of LDD MOSFET’s
-
J. Y. -C. Sun, M. R. Wordeman and S. E. Laux, “On the Accuracy of Channel Length Characterization of LDD MOSFET’s,” IEEE Trans. Elect. Dev., ED-33, p. 1556, 1986.
-
(1986)
IEEE Trans. Elect. Dev.
, vol.ED-33
, pp. 1556
-
-
Sun, J.Y.-C.1
Wordeman, M.R.2
Laux, S.E.3
-
2
-
-
0024770257
-
Application of Electrical Effective Channel Length and External Resistance Measurement Techniques to Submicrometer CMOS Process
-
D.J. Mountain, “Application of Electrical Effective Channel Length and External Resistance Measurement Techniques to Submicrometer CMOS Process,” IEEE Trans. Electron Dev., ED-36, p. 24–99, 1989.
-
(1989)
IEEE Trans. Electron Dev.
, vol.ED-36
, pp. 24-99
-
-
Mountain, D.J.1
-
3
-
-
0022751618
-
Analysis of the Gate-Voltage-Dependent Series Resistance of MOSFET’s
-
K. K. Ng and W. T. Lynch, “Analysis of the Gate-Voltage-Dependent Series Resistance of MOSFET’s,” IEEE Trans. Elect. Dev., ED-33(7), p. 965, 1986.
-
(1986)
IEEE Trans. Elect. Dev.
, vol.ED-33
, Issue.7
, pp. 965
-
-
Ng, K.K.1
Lynch, W.T.2
-
5
-
-
0018468995
-
A New Method to Determine Effective MOSFET Channel Length
-
K. Terada and H. Muta, “A New Method to Determine Effective MOSFET Channel Length,” Jap. J. Appl. Phys., 18(5), p. 953, 1979.
-
(1979)
Jap. J. Appl. Phys.
, vol.18
, Issue.5
, pp. 953
-
-
Terada, K.1
Muta, H.2
-
6
-
-
0019060104
-
A New Method to Determine MOSFET Channel Length
-
J. G. J. Chem, P. Chang, R. F. Motta and N. Godinho, “A New Method to Determine MOSFET Channel Length,” IEEE Elect. Dev. Lett., EDL-1(9), p. 170, 1980.
-
(1980)
IEEE Elect. Dev. Lett.
, vol.EDL-1
, Issue.9
, pp. 170
-
-
Chem, J.G.J.1
Chang, P.2
Motta, R.F.3
Godinho, N.4
-
7
-
-
0019057709
-
Experimental Derivation of the Source and Drain Resistance of MOS Transistors
-
P. I. Suciu and R. L. Johnston, “Experimental Derivation of the Source and Drain Resistance of MOS Transistors,” IEEE Trans. Elect. Dev., ED-27(9), p.1846, 1980.
-
(1846)
IEEE Trans. Elect. Dev.
, vol.ED-27
, Issue.9
, pp. 1846
-
-
Suciu, P.I.1
Johnston, R.L.2
-
8
-
-
0020003558
-
Measurement of MOSFET Constants
-
F. H. De La Moneda, H. N. Kotecha and M. Shatzkes, “Measurement of MOSFET Constants,” IEEE Elect. Dev. Lett., EDL-3(1), p. 10, 1982.
-
(1982)
IEEE Elect. Dev. Lett.
, vol.EDL-3
, Issue.1
, pp. 10
-
-
De La Moneda, F.H.1
Kotecha, H.N.2
Shatzkes, M.3
-
9
-
-
0020304176
-
An Improved Method to Determine MOSFET Channel Length
-
K. L. Peng and M. A. Afromowitz, “An Improved Method to Determine MOSFET Channel Length,” IEEE Elect. Dev. Lett., EDL-3(12), p. 360, 1982.
-
(1982)
IEEE Elect. Dev. Lett.
, vol.EDL-3
, Issue.12
, pp. 360
-
-
Peng, K.L.1
Afromowitz, M.A.2
-
10
-
-
0021489601
-
Source-and-Drain Series Resistance of LDD MOSFET’s
-
B. J. Sheu, C. Hu, P. K. Ko and F. C. Hsu, “Source-and-Drain Series Resistance of LDD MOSFET’s,” IEEE Elect. Dev. Lett., EDL-5(9), p. 365, 1984.
-
(1984)
IEEE Elect. Dev. Lett.
, vol.EDL-5
, Issue.9
, pp. 365
-
-
Sheu, B.J.1
Hu, C.2
Ko, P.K.3
Hsu, F.C.4
-
12
-
-
0021521674
-
Basic Parameter Measurement and Channel Broadening Effect in the Submicrometer MOSFET
-
K. -L. Peng, S. -Y. Oh, M. A. Afromowitz and J. L. Moll, “Basic Parameter Measurement and Channel Broadening Effect in the Submicrometer MOSFET,” IEEE Elect. Dev. Lett., EDL-5(11), p. 473, 1984.
-
(1984)
IEEE Elect. Dev. Lett.
, vol.EDL-5
, Issue.11
, pp. 473
-
-
Peng, K.-L1
Oh, S.-Y.2
Afromowitz, M.A.3
Moll, J.L.4
-
13
-
-
0022028916
-
A Modification on ‘An Improved Method to Determine MOSFET Channel Length,’
-
J. Whitfield, “A Modification on ‘An Improved Method to Determine MOSFET Channel Length,” IEEE Elect. Dev. Lett., EDL-6(3), p. 109, 1985.
-
(1985)
IEEE Elect. Dev. Lett.
, vol.EDL-6
, Issue.3
, pp. 109
-
-
Whitfield, J.1
-
14
-
-
0022706709
-
A Derivative Method to Determine a MOSFET’s Effective Channel Length and Width Electrically
-
L. Chang and J. Berg, “A Derivative Method to Determine a MOSFET’s Effective Channel Length and Width Electrically,” IEEE Elect. Dev. Lett., EDL-7(4), p. 229, 1986.
-
(1986)
IEEE Elect. Dev. Lett.
, vol.EDL-7
, Issue.4
, pp. 229
-
-
Chang, L.1
Berg, J.2
-
15
-
-
84907801823
-
Gate-Voltage-Dependent Effective Channel Length and Series Resistance of LDD MOSFET’s
-
G. J. Hu, C. Chang and Y. T. Chia, “Gate-Voltage-Dependent Effective Channel Length and Series Resistance of LDD MOSFET’s,” IEEE Trans. Elect. Dev., ED-34(12), p. 2469, 1987.
-
(1987)
IEEE Trans. Elect. Dev.
, vol.ED-34
, Issue.12
, pp. 2469
-
-
Hu, G.J.1
Chang, C.2
Chia, Y.T.3
-
16
-
-
0025212392
-
A New Extraction Method for Effective Channel Length on Lightly Doped Drain MOSFET’s
-
J. Ida, A. Kita and F. Ichikawa, “A New Extraction Method for Effective Channel Length on Lightly Doped Drain MOSFET’s,” Proc. IEEE 1990 Int. Conf. Microelectronic Test Structures, 3, p. 117, 1990.
-
(1990)
Proc. IEEE 1990 Int. Conf. Microelectronic Test Structures
, vol.3
, pp. 117
-
-
Ida, J.1
Kita, A.2
Ichikawa, F.3
-
17
-
-
0021517809
-
A Capacitance Method to Determine Channel Lengths for Conventional and LDD MOSFET’s
-
B. J. Sheu and P. K. Ko, “A Capacitance Method to Determine Channel Lengths for Conventional and LDD MOSFET’s,” IEEE Elect. Dev. Lett., EDL-5(11), p. 491, 1984.
-
(1984)
IEEE Elect. Dev. Lett.
, vol.EDL-5
, Issue.11
, pp. 491
-
-
Sheu, B.J.1
Ko, P.K.2
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