On “Effective Channel Length” in 0.1-µm MOSFET's

IEEE Electron Device Letters

Volumn 16, Issue 4, 1995, Pages 136-138

  Taur, Yuan ^a   Mii, Yuh Jier ^a   Logan, Ron ^a   Wong, Hon Sum ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC NETWORK PARAMETERS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES;

CHANNEL LENGTH; CHARGE SHARING EFFECTS; SHORT CHANNEL DEVICES;

MOSFET DEVICES;

EID: 0029290387     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.372493     Document Type: Article

References (11)

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