A Universal MOSFET Mobility Degradation Model for Circuit Simulation

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 9, Issue 10, 1990, Pages 1123-1126

  Yeric, Gregory M ^a   Tasch, Al F ^a   Banerjee, Sanjay K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER HARDWARE DESCRIPTION LANGUAGES; INTEGRATED CIRCUITS, VLSI - COMPUTER SIMULATION; TRANSISTORS, FIELD EFFECT - COMPUTER AIDED DESIGN;

SPICE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025503170     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.62736     Document Type: Article

References (13)

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