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Volumn 29, Issue 3, 2000, Pages 252-255

Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; HETEROJUNCTIONS; LIGHT POLARIZATION; LIGHT REFLECTION; PHOTOLUMINESCENCE; PIEZOELECTRIC MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033879444     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0058-8     Document Type: Article
Times cited : (4)

References (20)
  • 2
    • 0004751222 scopus 로고    scopus 로고
    • ed. F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura, and T. Strite Warrendale, PA: MRS
    • I. Akasaki, Nitride Semiconductors, ed. F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura, and T. Strite (Warrendale, PA: MRS, 1998), p. 3.
    • (1998) Nitride Semiconductors , pp. 3
    • Akasaki, I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.