Structure transformation of the C defects observed at low temperature (80 K)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 B, 1999, Pages 3837-3840

  Hata, Kenji ^b   Morita, Ryuji ^a   Yamashita, Mikio ^a   Shigekawa, Hidemi ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRON SPECTROSCOPY; ELECTRONIC STRUCTURE; POINT DEFECTS; SCANNING TUNNELING MICROSCOPY; SURFACE PHENOMENA; SURFACE STRUCTURE;

SCANNING TUNNELING SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0032594555     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3837     Document Type: Article

References (12)

1. R. M. Tromp, R. J. Hamers and J. E. Demuth: Phys. Rev. Lett. 55 (1985) 1303.
2. R. J. Hamers and U. K. Kohler: J. Vac. Sci. Technol. A 7 (1989) 2854.
3. Z. Zhang, M. A. Kulakov and B. Bullemer: Surf. Sci. 369 (1996) L131.
4. Ph. Avouris and D. Cahill: Ultramicroscopy. 42-44 (1992) 838.
5. V. A. Ukraintsev, Z. Dohnalek and J. T. Yater: Surf. Sci. 388 (1997) 132.
6. K. Hata, S. Ozawa, K. Miyake and H. Shigekawa: submitted to Surf. Sci.
7. M. Udagawa, Y. Umetani, H. Tanaka, M. Itoh, T. Uchiyama, Y. Watanaba, T. Yokotsuka and I. Sumita: Ultramicroscopy 42-44 (1992) 946.
8. H. Tochihara, T. Amakusa and M. Iwatsuki: Phys. Rev. B 50 (1994) 12262.
9. R. A. Wolkow: Phys. Rev. Lett. 68 (1992) 2636.
10. K. Hata, S. Ozawa and H. Shigekawa: submitted to Surf. Sci.
11. H. Shigekawa, K. Miyake, M. Ishida, K. Hata, H. Oigawa, Y. Nannichi, R. Yoshizaki, A. Kawazu, T. Abe, T. Ozawa and T. Nagamura: Jpn. J. Appl. Phys. 35 (1996) L1081.
12. K. Hata, M. Ishida, K. Miyake and H. Shigekawa: Appl. Phys. Lett. 73 (1998) 40.