Effect of drain voltage on channel temperature and reliability of pseudomorphic InP-based HEMTs

Microelectronics Reliability

Volumn 40, Issue 2, 2000, Pages 287-291

  Dammann, M ^a   Chertouk, M ^a   Jantz, W ^a   Kohler K ^a   Marsetz, W ^a   Schmidt, K H ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); RELIABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; THERMOANALYSIS;

BIASED ACCELERATED LIFE TESTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033874881     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00206-1     Document Type: Article

References (12)

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