Behavior of fluorine in N-AlInAs layers under bias-temperature stresses

Materials Research Society Symposium - Proceedings

Volumn 442, Issue , 1997, Pages 517-522

  Yamamoto, Y ^a   Hayafuji, N ^a   Sato, K ^a   Otsubo, M ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; FLUORINE; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; THERMAL DIFFUSION;

BIAS TEMPERATURE STRESS; ELECTRICAL DEGRADATION; ELECTROCHEMICAL REACTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030687363     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)