W-band high gain passivated 0.15μm InP-based HEMTs MMIC technology with high thermal stability on InP substrates

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 227-230

  Chertouk, M ^a   Steinhagen, F ^a   Massler, H ^a   Dammann, M ^a   Haydl, W H ^a   Koehler, K ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; THERMAL STRESS; THERMODYNAMIC STABILITY;

GAIN PASSIVATION; HIGH FREQUENCY CHARACTERISTICS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032296871     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)