Reflectance spectroscopy on GaN films under uniaxial stress

Applied Physics Letters

Volumn 71, Issue 3, 1997, Pages 374-376

  Yamaguchi, A A ^a   Mochizuki, Y ^a   Sasaoka, C ^a   Kimura, A ^a   Nido, M ^a   Usui, A ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRONIC DENSITY OF STATES; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS; SPECTROSCOPY; STRAIN; STRESSES; X RAY DIFFRACTION;

GALLIUM NITRIDE; REFLECTANCE SPECTROSCOPY; STRAIN ANISOTROPY; UNIAXIAL STRESS;

SEMICONDUCTING FILMS;

EID: 0031191968     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119541     Document Type: Article

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