Initial evaluation of a valved Te source for MBE growth of HgCdTe

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 740-742

  Edwall, D D ^a   Young, D B ^a   Chen, A C ^a   Zandian, M ^a   Arias, J M ^a   Dlugosch, Brian ^b   Priddy, Scott ^b  

^a ROCKWELL SCIENCE CENTER   (United States)

^b EPI MBE Products   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0032690005     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0063-5     Document Type: Article

References (6)

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2. EPI Application Note, Seotember 1995, "State-of-the-art device results using EPI v. • ed crackers for phosphorus and arsenic."
3. EPI Application Note, December 1997, "The corrosive series valved cracker for antimony."
4. E. Hall, R. Naone, J.E. English, H.R. Blank, J. Champlain and H. Kroemer, J. Vac. Sci. Technol. B 16, 2660 (1998).
5. J. Bajaj, J.M. Arias, M. Zandian, D.D. Edwall, J.G. Pasko, L.O. Bubulac and L.J. Kozlowski, J. Electron. Mater. 25, 1394 (1996).
6. D.D. Edwall, M. Zandian, A.C. Chen and J.M. Arias, J. Electron. Mater. 26, 493 (1997).