Study of optical characteristics of damage in oxygen-implanted 6H-SiC

Journal of Materials Science Letters

Volumn 18, Issue 12, 1999, Pages 979-982

  Wang, Lianwei ^a   Huang, Jipo ^a   Lin, Chenglu ^a   Zou, Shichang ^a   Zheng, Yuxiang ^b   Wang, Xinjun ^b   Huang, Daming ^b   Zetterling, C M ^c   Ostling M ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b FUDAN UNIVERSITY   (China)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; DOPING (ADDITIVES); ENERGY GAP; ION IMPLANTATION; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; OXIDATION; OXYGEN; POINT DEFECTS; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ELASTIC DAMAGE ENERGY; SPECTROSCOPIC ELLIPSOMETRY;

SILICON CARBIDE;

EID: 0032635162     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006627610829     Document Type: Article

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