High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 216, Issue 1, 2000, Pages 15-20

  Stemmer, J ^a   Fedler, F ^a   Klausing, H ^a   Mistele, D ^a   Rotter, T ^a   Semchinova, O ^a   Aderhold, J ^a   Sanchez, A M ^b   Pacheco, F J ^b   Molina, S I ^b   Fehrer, M ^c   Hommel, D ^c   Graul, J ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b UNIVERSITY OF CÁDIZ   (Spain)

^c UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; DISLOCATIONS (CRYSTALS); HALL EFFECT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; HALL MOBILITY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; VAN-DER-PAUW HALL MEASUREMENTS;

SEMICONDUCTING FILMS;

EID: 0033721773     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00468-1     Document Type: Article

References (9)

1. Nakamura S., Senoh M., Nagahama S.I., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kozaki T., Umemoto H., Sano M., Chocho K. Appl. Phys. Lett. 72:1998;211.
2. Khan M.A., Chen Q., Wang J.W., Shur M.S., Dermott B.T., Higgins J.A., Burm J., Schaff W., Eastman L.F. Electron. Lett. 32:1996;357.
3. Tarsa E.J., Heying B., Wu X.H., Fini P., DenBaars S.P., Speck J.S. J. Appl. Phys. 82:1997;5472.
4. Zhang J.P., Sun D.Z., Wang X.L., Li X.B., Kong M.Y., Zeng Y.P., Li J.M., Lin L.Y. J. Crystal Growth. 192:1998;471.
5. Matthews J.W., Blakeslee A.E. J. Crystal Growth. 27:1974;118.
6. Fischer A., Kühne H., Richter H. Phys. Rev. Lett. 73:1994;2712.
7. Look D.C., Molnar R.J. Appl. Phys. Lett. 70:1997;3377.
8. Bernardini F., Fiorentini V., Vanderbilt D. Phys. Rev. B. 56:1997;R10024.
9. Molina S.I., Sánchez A.M., Pacheco F.J., García R., Sánchez-García M.A., Calleja E. Appl. Phys. Lett. 74:1999;3362.