The effect of buried AlxGa1-xN isolating layers on the transport properties of GaN deposited on sapphire substrate by molecular beam epitaxy using NH3

Journal of Crystal Growth

Volumn 192, Issue 3-4, 1998, Pages 471-474

  Zhang, Jian Ping ^a   Sun, Dian Zhao ^a   Wang, Xiao Liang ^a   Li, Xiao Bing ^a   Kong, Mei Ying ^a   Zeng, Yi Ping ^a   Li, Jin Min ^a   Lin, Lan Ying ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Buried alX; Ga1 x; Gan; MBE; N isolating layers

Indexed keywords

AMMONIA; CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES;

GALLIUM NITRIDE; HALL MOBILITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032167044     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00428-X     Document Type: Article

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