Chemical state of phosphorus at the silicon surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 7 A, 1997, Pages 4299-4300

  Sato, Yoshiyuki ^a   Yoshimura, Yusuke ^b   Ono, Kanta ^b   Fujioka, Hiroshi ^b   Maeyama, Satoshi ^a   Oshima, Masaharu ^b  

^a NTT CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Phosphorus; Pileup; Silicon; SRPES; Surface

Indexed keywords

CHEMICAL STATE; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY;

CHEMICAL BONDS; COMPOSITION; ELECTRON SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; OXIDES; SEMICONDUCTING SILICON; SURFACES; SYNCHROTRON RADIATION;

PHOSPHORUS;

EID: 0031191874     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4299     Document Type: Article

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