Modeling the effect of phosphorus dose loss at the SiO2 interface on CMOS device characteristics

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1997, Pages 85-88

  Vuong, H H ^a   Rafferty, C S ^a   McMacken, J R ^a   Ning, J ^a   Chaudhry, S ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MOS DEVICES; PARTIAL DIFFERENTIAL EQUATIONS; PHOSPHORUS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICA; VLSI CIRCUITS;

PHOSPHOROUS DOSE LOSS EFFECT; TRANSIENT ENHANCED DIFFUSION EFFECT;

CMOS INTEGRATED CIRCUITS;

EID: 0030719577     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)