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Volumn 172, Issue 1-2, 1997, Pages 64-74

Investigations on strain relaxation of ZnSxSe1-x layers grown by metalorganic vapor phase epitaxy

(8) Kastner, Marcus J a Leo, Gabriella b Brunhuber, Doris a Rosenauer, Andreas a Preis, Herbert a Hahn, Berthold a Deufel, Markus a Gebhardt, Wolfgang a

a UNIVERSITY OF REGENSBURG (Germany)

b Ist Stud Nuovi Materiali Per l'E (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); RUTHERFORD BACKSCATTERING SPECTROSCOPY; STRAIN MEASUREMENT; SUBSTRATES; TERNARY SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EPILAYER; HETEROINTERFACE; LAYER UNIT CELL; STRAIN RELAXATION;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0031546757 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00722-1 Document Type: Article

Times cited : (4)

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