SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 238-243

Light emitting diodes from MOVPE-grown p- and n-doped II-VI compounds

(4) Gebhardt, W a Hahn, B a Stanzl, H a Deufel, M a

a UNIVERSITY OF REGENSBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; COMPOSITION; LIGHT EMITTING DIODES; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES;

BUTYLCHLORIDE; CADMIUM CONCENTRATION; DIODE STRUCTURE; PHENYLHYDRAZINE; ROOM TEMPERATURE LUMINESCENCE EFFICIENCY; THREE DIMENSIONAL GROWTH MODE;

SEMICONDUCTOR GROWTH;

EID: 0030562248 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00821-7 Document Type: Article

Times cited : (12)

References (14)

1
- 51249168945
- H. Stanzl, K. Wolf, S. Bauer, W. Kuhn, A. Naumov and W. Gebhardt, J. Electron. Mater. 22 (1993) 501.
- (1993) J. Electron. Mater. , vol.22 , pp. 501
- Stanzl, H.¹ Wolf, K.² Bauer, S.³ Kuhn, W.⁴ Naumov, A.⁵ Gebhardt, W.⁶

2
- 0030562182
- H. Hamaden, J. Söllner, B. Bollig, J. Woitok, M. Heuken, J. Crystal Growth 159 (1996) 21.
- (1996) J. Crystal Growth , vol.159 , pp. 21
- Hamaden, H.¹ Söllner, J.² Bollig, B.³ Woitok, J.⁴ Heuken, M.⁵

3
- 21544432253
- G. Guha, J.M. DePuydt, J. Qiu, G.E. Hofler, M.A. Haase, B.J. Wu and H. Cheng, Appl. Phys. Lett. 63 (1993) 3023.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 3023
- Guha, G.¹ DePuydt, J.M.² Qiu, J.³ Hofler, G.E.⁴ Haase, M.A.⁵ Wu, B.J.⁶ Cheng, H.⁷

4
- 0029632952
- A. Rosenauer, T. Reisinger, E. Steinkirchner, J. Zweck and W. Gebhardt, J. Crystal Growth 152 (1995) 42.
- (1995) J. Crystal Growth , vol.152 , pp. 42
- Rosenauer, A.¹ Reisinger, T.² Steinkirchner, E.³ Zweck, J.⁴ Gebhardt, W.⁵

5
- 0029270925
- Sz. Fujita, T. Tojyo, T. Yoshizawa and Sg. Fujita, J. Electron. Mater. 24 (1995) 137.
- (1995) J. Electron. Mater. , vol.24 , pp. 137
- Fujita, Sz.¹ Tojyo, T.² Yoshizawa, T.³ Fujita, Sg.⁴

6
- 0028760752
- Sz. Fujita, T. Asano, K. Maehara, T. Tojyo and Sg. Fujita, J. Crystal Growth 138 (1994) 737.
- (1994) J. Crystal Growth , vol.138 , pp. 737
- Fujita, Sz.¹ Asano, T.² Maehara, K.³ Tojyo, T.⁴ Fujita, Sg.⁵

7
- 0028760538
- W. Taudt, A. Schneider, M. Heuken, Ch. Fricke and A. Hoffmann, J. Crystal Growth 138 (1994) 418.
- (1994) J. Crystal Growth , vol.138 , pp. 418
- Taudt, W.¹ Schneider, A.² Heuken, M.³ Fricke, Ch.⁴ Hoffmann, A.⁵

8
- 0028760447
- S. Akram and I. Bhat, J. Crystal Growth 138 (1994) 105.
- (1994) J. Crystal Growth , vol.138 , pp. 105
- Akram, S.¹ Bhat, I.²

9
- 0028526618
- K. Hayashi, Appl. Phys. Lett. 65 (1994) 2084.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2084
- Hayashi, K.¹

10
- 0028762074
- Sz. Fujita and Sg. Fujita, J. Crystal Growth 145 (1994) 552.
- (1994) J. Crystal Growth , vol.145 , pp. 552
- Fujita, Sz.¹ Fujita, Sg.²

11
- 84990629732
- H. Stanzl, T. Reisinger, K. Wolf, M. Kastner, B. Hahn and W. Gebhardt, Phys. Status Solidi (b) 187 (1995) 303.
- (1995) Phys. Status Solidi (B) , vol.187 , pp. 303
- Stanzl, H.¹ Reisinger, T.² Wolf, K.³ Kastner, M.⁴ Hahn, B.⁵ Gebhardt, W.⁶

12
- 0040206066
- Ed. D.J. Lockwood
- H. Stanzl, S. Lankes, T. Reisinger, K. Wolf, M. Kastner and W. Gebhardt, 22nd Int. Conf. on the Physics of Semiconductors, Ed. D.J. Lockwood (1995) p. 616.
- (1995) 22nd Int. Conf. on the Physics of Semiconductors , pp. 616
- Stanzl, H.¹ Lankes, S.² Reisinger, T.³ Wolf, K.⁴ Kastner, M.⁵ Gebhardt, W.⁶

13
- 0029228026
- W. Gebhardt, H. Stanzl, T. Reisinger, G. Schötz and M. Kastner, Mater. Sci. Forum 182-184 (1995) 105.
- (1995) Mater. Sci. Forum , vol.182-184 , pp. 105
- Gebhardt, W.¹ Stanzl, H.² Reisinger, T.³ Schötz, G.⁴ Kastner, M.⁵

14
- 0028760752
- Sz. Fujita, T. Asano, K. Maehara, T. Tojyo, Sg. Fujita, J. Crystal Growth 138 (1994) 737.
- (1994) J. Crystal Growth , vol.138 , pp. 737
- Fujita, Sz.¹ Asano, T.² Maehara, K.³ Tojyo, T.⁴ Fujita, Sg.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.