Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low-temperature MOVPE growth of ZnSe, ZnS and ZnSSe

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 279-285

  Prete, P ^a   Lovergine, N ^b   Zanotti Fregonara, C ^c   Mancini, A M ^b   Smith, L M ^d   Rushworth, S A ^d  

^a Ist Stud Nuovi Materiali Per l'E   (Italy)

^b INFM   (Italy)

^c CNR   (Italy)

^d Epichem Limited   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CHEMICAL BONDS; CRYSTAL IMPURITIES; EMISSION SPECTROSCOPY; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR STRUCTURE; PYROLYSIS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; ZINC SULFIDE;

PRECURSORS; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0034141045     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00555-2     Document Type: Article

References (23)

1. Toda A., Nakamura F., Yanashima K., Ishibashi A. J. Cryst. Growth. 170:1997;461.
2. Irvine S.J.C., Stafford A., Ahmed M.U., Brown A., Keyrandish H. J. Electron. Mater. 26:1997;723.
3. Lovergine N., Prete P., Leo G., Calcagnile L., Cingolani R., Mancini A.M., Romanato F., Drigo A.V. Cryst. Res. Technol. 33:1998;183.
4. Mitsuhashi H., Mitsuishi I., Kukimoto H. J. Cryst. Growth. 77:1986;219.
5. Ishibashi A. J. Cryst. Growth. 159:1996;555.
6. Fujita Sg., Isemura M., Sakamoto T., Yoshimura N. J. Cryst. Growth. 86:1988;263.
7. Heuken M., Geyzers K.P., Söllner J., Schneider A., Guimarães F.E.G., Heime K. J. Cryst. Growth. 124:1992;633.
8. Prete P., Lovergine N., Cannoletta D., Mancini A.M., Mele G., Vasapollo G. J. Appl. Phys. 84(11):1998;6460.
9. Khan O.F.Z., O'Brien P., Hamilton P.A., Walsh J.R., Jones A.C. Chemtronics. 4:1989;224.
10. Maung N., Williams J.O., Wright A.C. J. Molec. Struct. (TEOCHEM). 453:1998;181.
11. N. Lovergine, P. Prete, S. Petroni, G. Mele, A.M. Mancini, G. Vasapollo, Mater. Chem. Phys., submitted for publication.
12. Ahmed M.U., Prete P., Irvine S.J.C., Stafford A., Smith L.M., Jones A.C., Rushworth S.A. J. Cryst. Growth. 184:1998;429.
13. Irvine S.J.C., Ahmed M.U., Prete P. J. Electron. Mater. 27:1998;763.
14. Fujita Y., Terada T., Fujita S. Jpn. J. Appl. Phys. 35:1998;923.
15. Lovergine N., Longo M., Prete P., Gerardi C., Calcagnile L., Cingolani R., Mancini A.M. J. Appl. Phys. 81:1997;685.
16. Blanconnier P., Hogrel J.F., Jeans-Louis A.M., Sermage B. J. Appl. Phys. 52:1981;6895.
17. Shahzad K., Petruzzello J., Olego D., Cammack D., Gaines J.M. Appl. Phys. Lett. 57:1990;2452.
18. Myhajlenko S., Batstone J.L., Hutchinson H.J., Steeds J.W. J. Phys. C. 17:1984;6477.
19. Yoshikawa A., Tanaka K., Yamaga S., Kosai H. Jpn. J. Appl. Phys. 23:1984;L424.
20. Taguchi T., Kawazu Z., Ohno T., Sawada A. J. Cryst. Growth. 101:1990;294.
21. Prete P., Lovergine N., Mazzer M., Zanotti-Fregonara C., Mancini A.M. J. Cryst. Growth. 204:1999;29.
22. Samelson H., Lempicki A. Phys. Rev. 125:1962;901.
23. Taguchi T., Yokogawa T., Fujita S., Satoh M., Inuishi Y. J. Cryst. Growth. 59:1982;317.