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Volumn 34, Issue 7, 1995, Pages L797-L799
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High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures
a a a a |
Author keywords
AIGaN; Blue LED; Green LED; InGaN; Quantum well structure; Yellow LED
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Indexed keywords
FILM GROWTH;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
NITRIDES;
QUANTUM EFFICIENCY;
SAPPHIRE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING FILMS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
SUBSTRATES;
ALUMINUM GALLIUM NITRIDE;
INDIUM GALLIUM NITRIDE;
LIGHT EMITTING DIODES;
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EID: 0029346154
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.34.L797 Document Type: Article |
Times cited : (1507)
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References (14)
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