High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures

Japanese Journal of Applied Physics

Volumn 34, Issue 7, 1995, Pages L797-L799

  Nakamura, Shuji ^a   Senoh, Masayuki ^a   Iwasa, Naruhito ^a   Nagahama, Shin Ichi ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

AIGaN; Blue LED; Green LED; InGaN; Quantum well structure; Yellow LED

Indexed keywords

FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ALUMINUM GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE;

LIGHT EMITTING DIODES;

EID: 0029346154     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.L797     Document Type: Article

References (14)

1. S. Strite and H. Morkoç 1992 J. Vac. Sci. & Technol. B10 1237.
2. H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov and M. Burns 1994 J. Appl. Phys. 76 1363.
3. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki 1989 Jpn. J. Appl. Phys. 28 L2112.
4. S. Nakamura and T. Mukai 1992 Jpn. J. Appl. Phys. 31 L1457.
5. M. A. Khan, J. N. Kuznia, D. T. Olson, M. Blasingame and A. R. Bhattarai 1993 Appl. Phys. Lett. 63 2455.
6. S. Nakamura, N. Iwasa, M. Senoh and T. Mukai 1992 Jpn. J. Appl. Phys. 31 1258.
7. C. Wang and R. F. Davis 1993 Appl. Phys. Lett. 63 990.
8. S. Nakamura, T. Mukai and M. Senoh 1994 Appl. Phys. Lett. 64 1687.
9. S. Nakamura, T. Mukai and M. Senoh 1994 J. Appl. Phys. 76 8189.
10. M. G. Craford Circuits & Devices, September (1992) 24.
11. D. E. Eason, Z. Yu, W. C. Hughes, W. H. Roland, C. Boney, J. W. Cook Jr., J. F. Schetzina, G. Cantwell and W. C. Harasch 1995 Appl. Phys. Lett. 66 115.
12. S. Nakamura 1994 Microelec. J. 25 651.
13. S. Nakamura, T. Mukai, M. Senoh, S. Nagahama and N. Iwasa 1993 J. Appl. Phys. 74 3911.
14. S. Nakamura 1991 Jpn. J. Appl. Phys. 30 1620.