Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba,Sr)TiO3 capacitors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 253-256

  Sun, S C ^a   Tsai, M S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS MEMORY (DRAM);

BARIUM TITANATE; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; LEAKAGE CURRENTS; PERMITTIVITY; RANDOM ACCESS STORAGE; THIN FILMS; VOLTAGE MEASUREMENT;

CAPACITORS;

EID: 84886448020     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)