Investigation of the effect of processing steps on stress in a polysilicon structural membrane

Journal of Micromechanics and Microengineering

Volumn 10, Issue 2, 2000, Pages 223-234

  Berney, H ^a   Hill, M ^a   Kelleher, A M ^a   Hynes, E ^b   O'Neill, M ^b   Lane, W A ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b ANALOG DEVICES   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; INTERFEROMETRY; MICROMACHINING; SEMICONDUCTING FILMS; SEMICONDUCTING GLASS; SEMICONDUCTOR DEVICE STRUCTURES; TENSILE STRESS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; POLYSILICON PRESSURE; TETRAETHYLORTHOSILICATE OXIDE;

SILICON SENSORS;

EID: 0033682787     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/10/2/321     Document Type: Article

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