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Volumn 171, Issue 1-2, 1997, Pages 50-55
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The mechanism of secondary grain growth in polysilicon films
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Author keywords
[No Author keywords available]
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Indexed keywords
ANISOTROPY;
CHEMICAL VAPOR DEPOSITION;
COALESCENCE;
DISLOCATIONS (CRYSTALS);
GRAIN GROWTH;
INTERFACIAL ENERGY;
PHOSPHORUS;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
TRANSMISSION ELECTRON MICROSCOPY;
LOW PRESSURE CHEMICAL VAPOR DEPOSITION;
POLYSILICON FILMS;
SEMICONDUCTING FILMS;
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EID: 0031546329
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)00476-9 Document Type: Article |
Times cited : (14)
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References (18)
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