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Volumn 171, Issue 1-2, 1997, Pages 50-55

The mechanism of secondary grain growth in polysilicon films

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CHEMICAL VAPOR DEPOSITION; COALESCENCE; DISLOCATIONS (CRYSTALS); GRAIN GROWTH; INTERFACIAL ENERGY; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0031546329     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00476-9     Document Type: Article
Times cited : (14)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.