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Volumn 79, Issue 2, 2000, Pages 141-146

Hemispherical-grained LPCVD-polysilicon films for use in MEMS applications

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; INTERFACES (MATERIALS); MICROELECTROMECHANICAL DEVICES; MICROSENSORS; POLYCRYSTALLINE MATERIALS; RESIDUAL STRESSES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICA; SURFACE ROUGHNESS; TENSILE STRESS;

EID: 0033879159     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00274-5     Document Type: Article
Times cited : (9)

References (12)
  • 1
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    • Stress in polycrystalline and amorphous silicon thin films
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    • (1983) J. Appl. Phys. , vol.54 , Issue.8 , pp. 4674-4675
    • Howe, R.T.1    Muller, R.S.2
  • 2
    • 0003180296 scopus 로고
    • An X-ray mask with a low-stress controlled polysilicon membrane in use for high aspect ratio pattern lithography
    • Kawasaki, June
    • K. Suzuki, H. Ueno, N. Nakamura, S. Sugiyama, An X-ray mask with a low-stress controlled polysilicon membrane in use for high aspect ratio pattern lithography, Tech. Dig. of the 15th Sensor Symposium, Kawasaki, June 1977, pp. 197-200.
    • (1977) Tech. Dig. of the 15th Sensor Symposium , pp. 197-200
    • Suzuki, K.1    Ueno, H.2    Nakamura, N.3    Sugiyama, S.4
  • 3
    • 0026370560 scopus 로고
    • Control of residual stress of polysilicon thin films by heavy doping in surface micromachining
    • San Francisco
    • M. Orpana, A.O. Kohone, Control of residual stress of polysilicon thin films by heavy doping in surface micromachining, Dig. of TRANSDUCERS'91, San Francisco, 1991, pp. 957-960.
    • (1991) Dig. of TRANSDUCERS'91 , pp. 957-960
    • Orpana, M.1    Kohone, A.O.2
  • 4
    • 0025698152 scopus 로고
    • The application of fine-grained, tensile polysilicon to mechanically resonant transducers
    • Guckel H., Sniegowski J.J., Christenson T.R., Raissi F. The application of fine-grained, tensile polysilicon to mechanically resonant transducers. Sens. Actuators, A. 21-23:1990;346-351.
    • (1990) Sens. Actuators, a , vol.2123 , pp. 346-351
    • Guckel, H.1    Sniegowski, J.J.2    Christenson, T.R.3    Raissi, F.4
  • 6
    • 0000514620 scopus 로고
    • Device application and structure observation for hemispherical-grained Si
    • Watanabe H., Aoto N., Adachi S., Kikkawa T. Device application and structure observation for hemispherical-grained Si. J. Appl. Phys. 71(7):1992;3538-3543.
    • (1992) J. Appl. Phys. , vol.71 , Issue.7 , pp. 3538-3543
    • Watanabe, H.1    Aoto, N.2    Adachi, S.3    Kikkawa, T.4
  • 7
    • 0029510929 scopus 로고
    • Polysilicon surface modification technique to reduce sticking of microstructures
    • Y. Yee, K. Chun, J.D. Lee, Polysilicon surface modification technique to reduce sticking of microstructures, Dig. of TRANSDUCERS'95, 1995, pp. 206-209.
    • (1995) Dig. of TRANSDUCERS'95 , pp. 206-209
    • Yee, Y.1    Chun, K.2    Lee, J.D.3
  • 8
    • 0030688643 scopus 로고    scopus 로고
    • Hemispherical-grained LPCVD-polysilicon films in use for MEMS applications
    • Chicago
    • K. Suzuki, Hemispherical-grained LPCVD-polysilicon films in use for MEMS applications, Dig. of TRANSDUCERS'97, Chicago, 1997, pp. 253-256.
    • (1997) Dig. of TRANSDUCERS'97 , pp. 253-256
    • Suzuki, K.1
  • 9
    • 0026171486 scopus 로고
    • Crystallization of amorphous silicon with clean surfaces
    • Sakai A., Ono H., Ishida K., Niino T., Tatsumi T. Crystallization of amorphous silicon with clean surfaces. J. Appl. Phys. 30(6A):1991;L941-L943.
    • (1991) J. Appl. Phys. , vol.30 , Issue.6 A
    • Sakai, A.1    Ono, H.2    Ishida, K.3    Niino, T.4    Tatsumi, T.5
  • 11
    • 0029346007 scopus 로고
    • Hemispherical-grained Si formation on in-situ phosphorus doped amorphous-Si electrode for 256 Mb DRAM's capacitor
    • Watanabe H., Tatsumi T., Ohnishi S., Kitajima H., Honma I., Ikarashi T., Ono H. Hemispherical-grained Si formation on in-situ phosphorus doped amorphous-Si electrode for 256 Mb DRAM's capacitor. IEEE Trans. Electron Devices. 42(7):1995;1247-1254.
    • (1995) IEEE Trans. Electron Devices , vol.42 , Issue.7 , pp. 1247-1254
    • Watanabe, H.1    Tatsumi, T.2    Ohnishi, S.3    Kitajima, H.4    Honma, I.5    Ikarashi, T.6    Ono, H.7
  • 12
    • 0003696779 scopus 로고
    • in: G. Hass, T.E. Thun (Eds.), Academic Press, New York
    • R.W. Hoffman, in: G. Hass, T.E. Thun (Eds.), Physics of Thin Films, Vol. 3, Academic Press, New York, 1966.
    • (1966) Physics of Thin Films , vol.3
    • Hoffman, R.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.