Critical processing issues for micromachined sacrificial layer etching and sealing

Sensors and Actuators, A: Physical

Volumn 76, Issue 1-3, 1999, Pages 356-364

  Berney, H ^a   Kemna, A ^c   Hill, M ^a   Hynes, E ^b   O'Neill, M ^b   Lane, W ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b ANALOG DEVICES   (Ireland)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; ETCHING; GLASS; MICROMACHINING; NITRIDES; OXIDATION; SCANNING ELECTRON MICROSCOPY; SEALING (FINISHING);

PHOSPHOSILICATE GLASS; POLYSILICON; PRESSURE SENSORS;

SILICON SENSORS;

EID: 0342626603     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00373-2     Document Type: Article

References (23)

1. Guckel H. Surface micromachined pressure transducers. Sensors and Actuators A. 28:1991;133-146.
2. Dudaicevs H., Kandler M., Moanoli Y., Mokwa W., Spiegel E. Surface micromachined pressure sensors with integrated CMOS read-out electronics. Sensors and Actuators A. 43:1994;157-163.
3. Howe R.T. Surface micromachining for microsensors and microactuators. J. Vac. Sci. Technol. B. 6(6):1988;1809-1813.
4. D.J. Monk, Hydrofluoric etching of silicon dioxide sacrificial layers, J. Electrochem. Soc. 141 (1), pp. 264-269.
5. D.J. Monk, A diffusion/chemical reaction model for HF etching of LPCVD phosphosilicate glass sacrificial layers, Proceedings of microelectromechanical Systems Workshop (IEEE), Hilton Head (1992) 47-51.
6. L. Ristic (Ed.), Sensor Technology and Devices, Artech House, London.
7. P.J. French, http://www.dimes.tudelft.nl/.
8. Watanabe H., Ohnishi S., Honma I., Kitajima H., Ono H., Wilhelm R.J., Sophie A.J.L. Selective etching of phosphosilicate glass with low pressure vapor HF. J. Electrochem. Soc. 142(1):1995;237-243.
9. T. Scheiter, U. Naher, C. Hierold, Stiction free sacrificial oxide etching in gaseous HF, a quantitative mode and its application, Eurosensors XI, The 11th European Conference on Solid State Transducers, Warsaw, Poland, September 21-24 (1997) 1369-1372.
10. C. Liu, Y.-C. Tai, Studies on the sealing of surface micromachined cavities using chemical vapour deposition materials, Solid-State Sensor and Actuator Workshop, Hilton Head, SC, June 13-16 (1994) 103-106.
11. H. Guckel, D.W. Burns, Planar processed polysilicon sealed cavities for pressure transducer arrays, Technical Digest, IEDM (1984) 223-225.
12. Legtenberg R., Tilmans H.A.C. Electrostatically driven vacuum-encapsulated polysilicon resonators: Part I. Design and fabrication. Sensors and Actuators A. 45:1994;57-66.
13. Guckel H. Silicon microsensors: construction, design and performance. Microelectronic Engineering. 15:1991;387-398.
14. Guckel H. Surface micromachined physical sensors. Sensor and Materials. 4(5):1993;251-264.
15. Rangsten P., Smith L., Rosengren L., Hok B. Electrostatically excited diaphragm driven as a loudspeaker. Sensors and Actuators A. 52:1996;211-215.
16. H.A.C. Tilmans, Micromechanical sensors using encapsulated built-in resonant strain gauges. PhD, University of Twente, Netherlands, 1993.
17. E. Kalvesten, L. Smith, L. Tenerz, G. Stemme, The first surface micromachined pressure sensor for cardiovascular pressure measurements, IEEE (1998) 574-579.
18. H. Guckel, D.W. Burns, C.R. Rutigliano, D.K. Showers, J. Uglow, Fine grained polysilicon and its application to planar pressure transducers, Transducers 87, Proc. of the 4th Int. Conf. on Solid-State Sensors and Actuators (1987) 277-282.
19. H. Berney, A. Kemna, W.A. Lane, E. Hynes, M. O'Neill, Protective and structural layers for surface micromachined pressure sensors, Proceedings of MME Ulvik in Hardanger, Norway, June 3-5 (1998) 36-39.
20. P.J. French, B.P. van Drieenhuizen, D. Poenar, J.F.L. Goosen, P.M. Sarro, R. Wolffenbuttel, Development of a low temperature, low stress polysilicon process, Proc. Eurosensors VII, Budapest, Hungary, Sept. 26-29 (1993) 358.
21. French P.J., van Drieenhuizen B.P., Poenar D., Goosen J.F.L., Mallee R., Sarro P.M., Wolffenbuttel R. The development of a low-stress polysilicon process compatible with standard device processing. J. Micromech. Syst. 5(3):1996;187-196.
22. Shioya Y., Maeda M. Comparison of phosphosilicate glass films deposited by three different chemical vapor deposition methods. J. Electrochem. Soc. 133(9):1986;1943-1948.
23. Takamatsu A., Miyoko S., Sakai H., Yoshimi T. Plasma-activated deposition and properties of phosphosilicate glass film. J. Electrochem. Soc. 131(8):1984;1865-1872.