X-ray absorption fine structure (XAFS) of Si wafer measured using total reflection X-rays

Spectrochimica acta, Part B: Atomic spectroscopy

Volumn 54, Issue 1, 1999, Pages 215-222

  Kawai, Jun ^a   Hayakawa, Shinjiro ^b   Kitajima, Yoshinori ^c   Gohshi, Yohichi ^b  

^a KYOTO UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHEMICAL BONDS; ELECTROMAGNETIC WAVE REFLECTION; FOURIER TRANSFORMS; X RAY SPECTROSCOPY;

EXTENDED X RAY ABSORPTION FINE STRUCTURE (EXAFS) SPECTROSCOPY; X RAY ABSORPTION NEAR-EDGE STRUCTURE (XANES) SPECTROSCOPY;

SILICON WAFERS;

EID: 0033521364     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0584-8547(98)00209-2     Document Type: Article

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