Ion beam synthesis of SiC/Si heterostructures by MEVVA implantation

Materials Research Society Symposium - Proceedings

Volumn 438, Issue , 1996, Pages 277-282

  Wong, S P ^a   Ho, L C ^a   Chen, Dihu ^a   Guo, W S ^a   Yan, H ^a   Kwok, R W M ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CHARACTERIZATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BEAMS; ION IMPLANTATION; PHYSICAL PROPERTIES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STOICHIOMETRY; SYNTHESIS (CHEMICAL);

CARBON REDISTRIBUTION; ION BEAM SYNTHESIS; METAL VAPOR VACUUM ARC IMPLANTATION; SILICON CARBIDE SILICON HETEROSTRUCTURE;

HETEROJUNCTIONS;

EID: 0030349408     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-438-277     Document Type: Conference Paper

References (18)