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Volumn 112, Issue 1-4, 1996, Pages 325-329

Ion beam synthesis of β-SiC at 950°C and structural characterization

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0030563268     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01236-2     Document Type: Article
Times cited : (10)

References (20)
  • 19
    • 0040121096 scopus 로고
    • Defects in silicon II
    • eds. W. Bullis, V. Gosele and F. Shimura
    • J. Vanhellemont and C. Claeys, Defects in Silicon II, eds. W. Bullis, V. Gosele and F. Shimura, Electrochem. Soc. vol. 91-9 (1991) p. 263.
    • (1991) Electrochem. Soc. , vol.91 , Issue.9 , pp. 263
    • Vanhellemont, J.1    Claeys, C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.