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Volumn 112, Issue 1-4, 1996, Pages 325-329
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Ion beam synthesis of β-SiC at 950°C and structural characterization
b,c a a c b |
Author keywords
[No Author keywords available]
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Indexed keywords
HIGH TEMPERATURE OPERATIONS;
ION IMPLANTATION;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR GROWTH;
SILICON CARBIDE;
TRANSMISSION ELECTRON MICROSCOPY;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
ION BEAM SYNTHESIS;
STRUCTURAL CHARACTERIZATION;
ION BEAM LITHOGRAPHY;
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EID: 0030563268
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/0168-583X(95)01236-2 Document Type: Article |
Times cited : (10)
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References (20)
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