TEM investigation of C-Si defects in carbon implanted silicon

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 1996, Pages 675-678

  Werner, P ^a   Koegler, R ^a   Skorupa, W ^a   Eichler, D ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; CARBON; CRYSTAL DEFECTS; ION IMPLANTATION; MORPHOLOGY; PRECIPITATION (CHEMICAL); SECONDARY ION MASS SPECTROMETRY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

CARBON IMPLANTED SILICON; METASTABILE AGGLOMERATES; POSITRON ANNIHILATION (PA) SPECTROMETRY; RADIATION INDUCED DEFECTS; RAPID THERMAL ANNEALING (RTA);

SILICON WAFERS;

EID: 0030361092     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)