Simulation of forward bias injection in proton irradiated silicon pn-junctions

Solid-State Electronics

Volumn 39, Issue 7, 1996, Pages 1087-1092

  Keskitalo, N ^a   Hallen A ^a   Masszi, F ^a   Olsson, J ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; PROTONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

DEEP LEVEL TRANSIENT SPECTROSCOPY MEASUREMENT; FORWARD BIAS INJECTION; PROTON IRRADIATED DEVICES;

SEMICONDUCTOR DEVICE MODELS;

EID: 0030193510     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00417-3     Document Type: Review

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