Effect of substrate temperature on carbon nitride thin films prepared by radio frequency sputtering

Chinese Physics Letters

Volumn 16, Issue 11, 1999, Pages 847-849

  Yang, Biug Chu ^a   Tajima, N ^b   Sogoh, T ^b   Takai, O ^b   Chen, Zhen Hua ^a  

^a CENTRAL SOUTH UNIVERSITY   (China)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CARBON FILMS; ELECTRONIC STRUCTURE; INFRARED DEVICES; NEAR INFRARED SPECTROSCOPY; NITRIDES; OPTICAL PROPERTIES; RADIO WAVES; SPUTTERING; SUBSTRATES; THIN FILMS;

CARBON NITRIDE FILMS; CARBON NITRIDE THIN FILMS; DIFFERENT SUBSTRATES; ELECTRON BANDS; ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES; LARGE SHIFTS; NEAR INFRARED REGION; RADIO FREQUENCY SPUTTERING; SUBSTRATES TEMPERATURE; ULTRAVIOLET-VISIBLE-NEAR INFRARED SPECTRUM;

ENERGY GAP;

EID: 0033483477     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/16/11/025     Document Type: Article

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