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Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 50-53

Effect of Si doping on the strain and defect structure of GaN thin films

(9) Romano, L T a Van De Walle, G G a Krusor, B S a Lau, R a Ho, J a Schmidt, T a Ager III, J W b Gotz W b Kern, R S c

a PALO ALTO RESEARCH CENTER (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c HEWLETT PACKARD COMPANY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRACK INITIATION; CRACK PROPAGATION; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); RESIDUAL STRESSES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; STRAIN MEASUREMENT;

GALLIUM NITRIDE;

THIN FILMS;

EID: 0033348671 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00404-4 Document Type: Article

Times cited : (10)

References (12)

1
- 0027575890
- K. Hiramatsu, T. Detchprohm, I. Akaksaki, Jpn. J. Appl. Phys 32 (1993) 1528.
- (1993) Jpn. J. Appl. Phys , vol.32 , pp. 1528
- Hiramatsu, K.¹ Detchprohm, T.² Akaksaki, I.³

2
- 2842559347
- C. Kesielowski, J. Kruger, S. Ruvimov, T. Suski, J.W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, E.R. Weber, M.D. Bremser, R.F. Davis, Phys. Rev. B 54 (1996) 17745.
- (1996) Phys. Rev. B , vol.54 , pp. 17745
- Kesielowski, C.¹ Kruger, J.² Ruvimov, S.³ Suski, T.⁴ Ager III, J.W.⁵ Jones, E.⁶ Liliental-Weber, Z.⁷ Rubin, M.⁸ Weber, E.R.⁹ Bremser, M.D.¹⁰ Davis, R.F.¹¹

3
- 0343291164
- S. Ruvimov, Z. Liliental-Weber, T. Suski, J.W. Ager III, J. Washburn, J. Krueger, C. Kesielowski, E.R. Weber, H. Amano, I. Akasaki, Appl. Phys. Lett. 69 (1996) 990.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 990
- Ruvimov, S.¹ Liliental-Weber, Z.² Suski, T.³ Ager III, J.W.⁴ Washburn, J.⁵ Krueger, J.⁶ Kesielowski, C.⁷ Weber, E.R.⁸ Amano, H.⁹ Akasaki, I.¹⁰

4
- 0030685558
- J.W. Ager III, T. Suski, S. Ruvimov, J. Krueger, G. Conti, E.R. Weber, M.D. Bremser, R.F. Davis, C.P. Kuo, Mater. Res. Soc. 449 (1997) 775.
- (1997) Mater. Res. Soc. , vol.449 , pp. 775
- Ager III, J.W.¹ Suski, T.² Ruvimov, S.³ Krueger, J.⁴ Conti, G.⁵ Weber, E.R.⁶ Bremser, M.D.⁷ Davis, R.F.⁸ Kuo, C.P.⁹

5
- 0032094714
- I. Lee, I. Choi, C. Lee, E. Shin, D. Kim, S.K. Noh, S. Son, K. Lim, H.J. Lee, J. Appl. Phys. 83 (1998) 5787.
- (1998) J. Appl. Phys. , vol.83 , pp. 5787
- Lee, I.¹ Choi, I.² Lee, C.³ Shin, E.⁴ Kim, D.⁵ Noh, S.K.⁶ Son, S.⁷ Lim, K.⁸ Lee, H.J.⁹

6
- 0026925404
- S. Nakamura, T. Mukai, M. Senoh, Jpn. J. Appl. Phys. Part 1 31 (1992) 2883.
- (1992) Jpn. J. Appl. Phys. Part 1 , vol.31 , pp. 2883
- Nakamura, S.¹ Mukai, T.² Senoh, M.³

7
- 0032064462
- D.P. Bour, M. Kneissl, L.T. Romano, M.D. McCluskey, C.G. Van de Wall, B.S. Krusor, R.M. Donaldson, J. Walker, C.J. Dunrowiicz, N.M. Johnson, IEEE J. Sel. Top. Quantum Electron. 4 (1998) 498.
- (1998) IEEE J. Sel. Top. Quantum Electron. , vol.4 , pp. 498
- Bour, D.P.¹ Kneissl, M.² Romano, L.T.³ McCluskey, M.D.⁴ Van De Wall, C.G.⁵ Krusor, B.S.⁶ Donaldson, R.M.⁷ Walker, J.⁸ Dunrowiicz, C.J.⁹ Johnson, N.M.¹⁰

8
- 0032089895
- S. Porowski, J. Crystal Growth 189/190 (1998) 153.
- (1998) J. Crystal Growth , vol.189-190 , pp. 153
- Porowski, S.¹

9
- 0005319999
- S. Hearne, E. Chason, J. Han, J.A. Floro, J. Figiel, J. Hunter, H. Amano, I.S.T. Tsong, Appl. Phys. Lett., 1999.
- (1999) Appl. Phys. Lett.
- Hearne, S.¹ Chason, E.² Han, J.³ Floro, J.A.⁴ Figiel, J.⁵ Hunter, J.⁶ Amano, H.⁷ Tsong, I.S.T.⁸

10
- 0000844988
- J.E. Northrup, J. Neugebauer, Phys. Rev. B 53 (1996) R10477.
- (1996) Phys. Rev. B , vol.53
- Northrup, J.E.¹ Neugebauer, J.²

11
- 33847532975
- in preparation
- L.T. Romano, C.G. Van de Walle, J.A. Ager III, W. Gotz, S.A. Kern, in preparation.
- Romano, L.T.¹ Van De Walle, C.G.² Ager III, J.A.³ Gotz, W.⁴ Kern, S.A.⁵

12
- 0032660979
- W.D. Nix, B.M. Clemens, J. Mater. Res. 14 (1999) 3467.
- (1999) J. Mater. Res. , vol.14 , pp. 3467
- Nix, W.D.¹ Clemens, B.M.²

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