AlGalnAs/InP strained-layer quantum well lasers at 1.3 μm grown by solid source molecular beam epitaxy

Journal of Electronic Materials

Volumn 28, Issue 8, 1999, Pages 980-985

  Savolainen, P ^a   Toivonen, M ^a   Orsila, S ^a   Saarinen, M ^a   Melanen, P ^a   Vilokkinen, V ^a   Dumitrescu, M ^a   Panarello, T ^b   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b EG and G Optoelectronics   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HIGH TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; MULTILAYERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; WAVEGUIDES;

HIGH CHARACTERISTIC TEMPERATURE; LONG WAVELENGTH LASER DIODES; LOW TRANSPARENCY CURRENT DENSITIES; SOLID SOURCE MOLECULAR BEAM EPITAXY; STRAINED LAYER QUANTUM WELL;

QUANTUM WELL LASERS;

EID: 0033340267     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0208-6     Document Type: Article

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