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Volumn 72, Issue 17, 1998, Pages 2090-2092
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Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
ELECTRONS;
LEAKAGE CURRENTS;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
THERMAL EFFECTS;
MULTIQUANTUM BARRIER;
SLOPE EFFICIENCY;
STEP INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE LASER;
QUANTUM WELL LASERS;
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EID: 0032050481
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.121285 Document Type: Article |
Times cited : (15)
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References (9)
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