Temperature-dependent characteristics of 1.3-μm AlGaInAs-InP lasers with multiquantum barriers at the guiding layers

IEEE Photonics Technology Letters

Volumn 10, Issue 12, 1998, Pages 1700-1702

  Pan, Jen Wei ^b   Chen, Ming Hong ^b   Chyi, Jen Inn ^a,b   Shih, Tien Tsorng ^c  

^a IEEE

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c CHUNGHWA TELECOM CO LTD   (Taiwan)

Author keywords

Cavity length; Multiple quantum well; Semiconductor lasers; Strain compensation

Indexed keywords

CURRENT DENSITY; ELECTRONS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE;

CAVITY LENGTH; MULTIQUANTUM BARRIERS; STRAIN COMPENSATION;

QUANTUM WELL LASERS;

EID: 0032300339     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.730474     Document Type: Article

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